Temperature-dependent thermal resistance of phase change memory
نویسندگان
چکیده
One of the key challenges phase change memory (PCM) is its high power consumption during reset operation, when material (typically Ge2Sb2Te5, i.e., GST) heats up to ∼900 K or more in order melt. Here, we study temperature-dependent behavior PCM devices by probing at ambient temperatures from 80 400 K. We find that different device structures exhibit contrasting behavior. The our confined-type nearly unchanged with temperature, corresponding a thermal resistance, whereas results for mushroom-type literature show linear relation between and suggesting constant resistance. This discrepancy ascribed temperature distributions properties dominant components cell as shown electro-thermal modeling. In confined cell, boundary resistance GST conductivity bottom electrode dominate while mushroom plays greater role. These findings can help design power- energy-efficient better focusing management efforts on device.
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2022
ISSN: ['1520-8842', '0003-6951', '1077-3118']
DOI: https://doi.org/10.1063/5.0081016